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VBE165R02S 产品详细

产品简介:

Product introduction:
VBsemi's VBE165R02S is a single N-channel MOSFET using SJ_Multi-EPI technology for high performance and reliability. Key features of the product include a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. Its package is TO252, which is suitable for various application scenarios.

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产品参数:

Detailed parameter description:
- VDS (drain-source voltage): 650V
- VGS (gate-source voltage): ㊣30V
- Vth (threshold voltage): 3.5V
- Drain-source resistance (m次) at VGS=10V: 2300
- Maximum drain current (ID): 2A
- Technology: SJ_Multi-EPI
-Package:TO252

领域和模块应用:

Examples of applicable fields and modules:
1. Industrial power module: VBE165R02S can be used as a power switch in industrial power modules to help improve power conversion efficiency and stability.
2. Automotive electronic modules: Due to its high performance and reliability, this product is suitable for automotive electronic modules, such as on-board chargers and electric vehicle control systems.
3. LED lighting module: In the field of LED lighting, VBE165R02S can be used as a power switch in LED drive circuits to provide efficient energy conversion and stable power output.
4. Medical equipment modules: Due to its stability and reliability, this product is suitable for medical equipment modules, such as medical imaging equipment and surgical instrument control systems.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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