产品简介：
**Product Introduction:**
VBE165R02 is a unipolar N-type field effect transistor launched by VBsemi. It has a drain-source voltage (VDS) of 650V, a gate-source voltage (VGS) of 30V, a threshold voltage (Vth) of 3.5V, as well as gate-source resistance and a drain current of 2A at different gate-source voltages. Manufactured using Plannar technology and packaged in TO252, it is suitable for various power supplies and circuit modules.
**Detailed parameter description:**
- VDS(V): drain-source voltage, 650V
- VGS(±V): Gate-source voltage, ±30V
- Vth(V): threshold voltage, 3.5V
- VGS=4.5V(mΩ): Gate-source resistance (VGS=4.5V), 3440mΩ
- VGS=10V(mΩ): Gate-source resistance (VGS=10V), 4300mΩ
- ID (A): Drain current, 2A
- Technology: manufacturing technology, Plannar
-Package: TO252
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领域和模块应用：
**Applicable areas and module examples:**
1. **Power module**: Since VBE165R02 has high drain-source voltage and moderate gate-source resistance, it is suitable for various power modules, including switching power supplies, inverters, etc.
2. **Drive module**: As a field effect transistor, VBE165R02 can be used in various drive modules, such as motor drive, LED drive, etc.
3. **Power control module**: In scenarios where current and voltage need to be controlled, such as power electronic converters, inverters, etc., VBE165R02 can be used as a key component.
4. **Industrial Automation**: Due to its stable and reliable performance, it is suitable for various control and drive modules in the field of industrial automation.
*请注意：以上只是示例应用场景，具体的应用取决于系统设计的要求和条件。在使用该器件时，请查阅其数据手册以获取详细的技术规格和特性
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