产品简介：
VBE155R02 is a Single N structure power MOSFET with a rated drain-source voltage of 550V, a moderate threshold voltage, and a manufacturing process suitable for Plannar technology. Its TO252 package is suitable for medium and low power applications.
VBE155R02 is suitable for scenarios that require medium and low power tolerance, low power consumption and moderate drain current, including automotive electronic modules, LED lighting drivers, industrial control modules and other fields.
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产品参数：
Product model: VBE155R02
Brand: VBsemi
Affiliated company: Shenzhen Weibi Semiconductor Co., Ltd.
parameter:
- Structure type: Single N
- Rated drain-source voltage (VDS): 550V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3V
- Drain-source resistance (VGS=10V): 3000 m次
- Drain current (ID): 2A
- Technology: Plannar
Package: TO252
领域和模块应用：
for example:
1. Automotive electronic modules:
Since VBE155R02 has moderate drain current and low power consumption, it is suitable for driving devices in automotive electronic modules, such as body control modules, electric vehicle charging control modules, etc.
2. LED lighting driver:
In LED lighting drivers, power MOSFETs are needed to drive and control LED lamp beads. The VBE155R02's TO252 package and Plannar technology make it an ideal choice in LED lighting drivers.
3. Industrial control module:
In industrial control modules, power MOSFETs are required to achieve precise control of various industrial equipment. The moderate current capability and low power consumption of the VBE155R02 make it suitable for power switching and current regulation functions in industrial control modules.
*请注意：以上只是示例应用场景，具体的应用取决于系统设计的要求和条件。在使用该器件时，请查阅其数据手册以获取详细的技术规格和特性
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