产品参数:
parameter:
- Unipolar N-channel field effect transistor (Single N)
- Rated drain-source voltage (VDS): 30V
- Rated gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 1.7V
- Drain-source on-resistance (m次) at VGS=4.5V: 6
- Drain-source on-resistance (m次) at VGS=10V: 5
- Maximum drain current (ID): 80A
- Technology: Trench (groove type)
Package: TO252
领域和模块应用:
for example:
1. **Power module**: VBE1307 can be used as a switching tube in the power module to adjust the stability and efficiency of the power output. Its low voltage drop and high drain current characteristics help reduce power loss and improve system energy efficiency.
2. **Electric vehicle control**: In the electric vehicle control system, VBE1307 can be used as the switching tube of the motor driver to control the start and stop of the motor and speed adjustment. Its high drain current and low voltage drop can meet high power and high speed driving requirements.
3. **Solar Inverter**: VBE1307 can be used in solar inverters as the switching tube of the inverter to convert the DC power generated by the solar panel into AC power. Its high drain current and low voltage drop characteristics can improve the conversion efficiency and stability of the inverter and reduce energy loss.
In short, the VBE1307 field effect transistor is suitable for applications that require high current and low voltage drop, such as power modules, electric vehicle control and solar inverters.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性