MOSFET

您现在的位置 > 首页 > MOSFET

VBE1302A 产品详细

产品简介:

VBE1302A is a single N-type field effect transistor with a drain-source voltage (VDS) of 30V, a gate-source voltage (VGS) range of ±20V, and a threshold voltage (Vth) of 1.7V. When the gate-source voltage is 4.5V and 10V respectively, the drain-source resistance is 3mΩ and 2mΩ respectively, and the maximum drain current is 100A. This product uses trench technology and is packaged in TO252.

文件下载

下载PDF 文档
立即下载

产品参数:


parameter:
- Single N-type field effect transistor
- VDS (drain-source voltage): 30V
- VGS (gate-source voltage): ㊣20V
- Threshold voltage (Vth): 1.7V
- Drain-source resistance (m次) at VGS=4.5V: 3
- Drain-source resistance (m次) at VGS=10V: 2
- Maximum drain current (ID): 100A
- Technology: Trench
Package: TO252

领域和模块应用:

Application introduction and examples:
VBE1302A is suitable for medium power and medium current application scenarios, such as:
1. Power module: VBE1302A can be used as a power switch tube in a switching power supply module for switching control and voltage stabilization of switching power supplies. It is suitable for power management of electronic products such as computers and communication equipment.
2. LED lighting module: In LED lighting products, VBE1302A can be used as the power switch tube of the LED driver to control the brightness and switching status of LED lights to achieve energy saving and dimming functions of LED lighting products.
3. Automotive electronic module: In automotive electronic systems, VBE1302A can be used as the power switch tube of the automotive motor driver to control the start, stop and speed of the automotive motor to improve the vehicle's power performance and fuel economy.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

打样申请

在线咨询

电话咨询

400-655-8788

微信咨询

一键置顶

打样申请
在线咨询
电话咨询
微信咨询