产品参数:
parameter:
- Single N-channel MOSFET
- Maximum drain-source voltage (VDS): 30V
- Maximum gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 1.7V
- On-resistance (RDS(on)) at VGS=4.5V: 3 m次
- On-resistance (RDS(on)) at VGS=10V: 2 m次
- Maximum drain current (ID): 120A
- Technology: Trench
Package: TO252
领域和模块应用:
This MOSFET is suitable for many fields and modules, here are some examples:
1. Automotive electronic modules: suitable for modules such as automotive engine control units (ECUs), vehicle power systems and vehicle motor controllers, providing efficient power conversion and stable motor drive.
2. Battery management module: In battery charge and discharge controller and battery protection system, it can be used in modules such as lithium batteries and electric vehicle batteries to ensure safe charge and discharge and long life of the battery.
3. Power inverter module: suitable for modules such as solar inverters and power inverters, providing efficient power conversion and stable AC power output, and is widely used in solar photovoltaic and wind power generation systems and other fields.
4. Industrial control module: In industrial automation controllers and PLC control systems, it can be used in industrial motor control and industrial equipment drive modules to provide high-performance industrial control and stable production processes.
5. Power amplification module: suitable for audio equipment such as power amplifiers and audio amplifiers, which can achieve high-quality audio amplification and power amplification, and provide clear and stable audio output.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性