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VBE1252M 产品详细

产品简介:

VBE1252M is a high-performance single-channel N-channel field effect transistor, suitable for medium and high power electronic equipment and modules, including power converters, motor controllers and high-power LED drivers. Its features include high rated drain-source voltage, low drain current and reliability, making it excellent in a variety of application scenarios.

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产品参数:

parameter:
- Type: Single N channel field effect transistor (Single N)
- Rated drain-source voltage (VDS): 250V
- Rated gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 3.5V
- Drain-source on-resistance (m次) at VGS=10V: 176
- Maximum drain current (ID): 17A
- Technology: Trench structure (Trench)
Package: TO252

领域和模块应用:

Application examples:
1. Power converter: VBE1252M can be used as a power switch in a power converter module for efficient energy conversion and stable power output, suitable for industrial power supplies, electric vehicle chargers and other applications.
2. Motor controller: In motor control and drive systems, VBE1252M can be used in fields such as electric vehicles, industrial machinery, and robots to provide reliable motor control and efficient energy conversion.
3. High-power LED driver: In the field of lighting, VBE1252M can be used for power switching and current regulation in high-power LED driver modules to achieve efficient and stable operation of the LED lighting system.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

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* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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