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VBE1203M 产品详细

产品简介:

The VBE1203M is a single N-channel field effect transistor with a rated drain-to-source voltage of 200V and a drain current of 10A. Its performance characteristics make it suitable for a variety of power switching and drive applications.

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产品参数:

**Parameter Description:**
- Product model: VBE1203M
- Brand: VBsemi
- Type: Single N-channel field effect transistor (Single N)
- Rated drain-source voltage (VDS): 200V
- Gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 3V
- Drain-source resistance at gate-source voltage 10V: 245m次
- Drain current (ID): 10A
- Technology: Trench
-Package:TO252

领域和模块应用:

**Example application scenarios and modules:**

1. **Power module:**
In power modules, VBE1203M can be used as the main power switch of the switching power supply to control the output voltage and current of the power supply. For example, in a power inverter, it can be used to control the switching frequency and output power of the inverter.

2. **Power tool module:**
In the power tool module, VBE1203M can be used as the power switch and driver of the power tool. It can control the start and stop and speed of the motor of the power tool, as well as the power output of the tool.

3. **Electric Vehicle Module:**
In the electric vehicle module, VBE1203M can be used as the power switch and controller of the electric vehicle. It can control the battery charging and discharging process of the electric vehicle, as well as the start and stop and speed control of the motor.

4. **Industrial Automation Module:**
In industrial automation modules, VBE1203M can be used as power switches and drivers in various industrial control systems. For example, in automated production lines, it can control the actions of various electric actuators and drives.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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