产品参数:
Product model: VBE1202
Brand: VBsemi
parameter:
- Function: Single N-type field effect transistor (Single N)
- Maximum drain-source voltage (VDS): 20V
- Maximum gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 0.5~1.5V
- Drain-source static resistance (RDS(on)), when VGS=2.5V: 3.5m次, when VGS=4.5V: 3m次
- Maximum drain current (ID): 120A
- Technology: Trench
Package: TO252
领域和模块应用:
Because VBE1202 has the characteristics of a single-channel N-type field effect transistor, it is suitable for multiple fields and modules, including but not limited to:
1. Power module: VBE1202 can be used in voltage regulators, inverters and switching power supplies in power modules to provide stable power output and efficient energy conversion efficiency.
2. Electric vehicle battery management module: In the electric vehicle battery management system, VBE1202 can be used for battery charge and discharge control, current limiting and protection functions to ensure the safety and reliability of the battery system.
3. Motor drive module: In the field of motor drive, VBE1202 can be used to control the start and stop, speed adjustment and steering control of the motor to achieve precise control of the motor and efficient energy conversion.
4. Industrial automation module: VBE1202 can be applied to sensors, actuators and controllers in industrial automation systems to realize automated control and monitoring of production lines and improve production efficiency and quality.
5. LED driver module: In the field of LED lighting, VBE1202 can be used in LED driver circuits to achieve dimming and color adjustment of LED lamp beads, providing high-quality lighting effects and energy-saving and environmentally friendly functions.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性