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VBE1154N 产品详细

产品简介:

The VBE1154N is a single N-type Trench technology MOSFET with 150V drain-source voltage (VDS), ±20V gate-source voltage (VGS), 3V threshold voltage (Vth), and 32 milliohms on-resistance. It is capable of withstanding a maximum drain current (ID) of 40 amps. The device is packaged in TO252.

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产品参数:

Model: VBE1154N
Brand: VBsemi
parameter:
- Type: Single N type
- VDS(V): 150
- VGS(㊣V): ㊣20
- Threshold voltage (V): 3
- On-resistance (miohms) at VGS=10V: 32
- Maximum drain current (ID) (amps): 40
- Technology: Trench
Package: TO252

领域和模块应用:

**Application Introduction:**
1. **Power Management**: Since VBE1154N has low drain current and moderate on-resistance, it is suitable for light-load power management applications, such as power converters and power switch modules.

2. **Consumer Electronics**: In consumer electronics, this device can be used in power modules such as mobile phone chargers and laptop adapters to achieve high efficiency and compact design.

3. **LED Driver**: Due to its low drain current and moderate on-resistance, VBE1154N can be used as a power switch module in LED driver circuits to ensure high efficiency and long life of LED lamps.

4. **Medical Equipment**: In medical equipment, this device can be used for power management and control in modules such as medical imaging equipment and electric surgical instruments to ensure the reliability and stability of the equipment.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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