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VBE112MR02 产品详细

产品简介:

Product introduction:
VBE112MR02 is a single N-type power field effect transistor (MOSFET) launched by VBsemi, using Plannar technology. This product has the characteristics of high withstand voltage and low on-resistance, and is suitable for some low-power power electronic applications.

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产品参数:

Detailed parameter description:
- Brand: VBsemi
- Model: VBE112MR02
- Type: Single N-type power MOSFET
- Rated voltage (VDS): 1200V
- Gate-source voltage range (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (RDS(on)) when gate-source voltage is 10V: 4500 m次
- Rated current (ID): 2A
- Technology: Plannar
-Package:TO252

领域和模块应用:





Examples of applicable fields and modules:
1. LED driver: Since VBE112MR02 has low power and moderate voltage parameters, it can be used as a switching power supply module in an LED lamp driver to provide stable driving current for LED lamps.
2. Power management module: In some low-power power management modules, such as small inverters and voltage regulators, VBE112MR02 can be used as a power switching device for voltage conversion and stable output.
3. Solar charge controller: In solar charge controller, VBE112MR02 can be used as a charge and discharge control module to ensure effective energy conversion between solar panels and batteries.

The above is an introduction to the VBE112MR02 product, detailed parameter descriptions and examples of paragraphs in applicable fields.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

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* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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