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VBE110MR02 产品详细

产品简介:

Product introduction:
VBE110MR02 is a single N-channel power MOSFET launched by VBsemi. It is manufactured using Plannar technology and has the characteristics of high reliability and stable performance. Suitable for a variety of power electronics applications and ideal for electronic product design.

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产品参数:

Detailed parameter description:
- Rated voltage (VDS): 1000V
- Gate-source voltage range (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=4.5V: 7500
- On-resistance (m次) at VGS=10V: 6000
- Maximum leakage current (ID): 2A

领域和模块应用:

Examples of applicable fields and modules:
1. Power management module: Due to its high rated voltage and low on-resistance, VBE110MR02 is suitable for switching circuits in power management modules and can provide efficient power control and management.
2. LED lighting system: In the LED lighting system, VBE110MR02 can be used as the power switch of the LED driver to achieve stable power supply to the LED lamp beads and improve the efficiency and reliability of the lighting system.
3. Industrial control equipment: VBE110MR02 is suitable for power switch modules in industrial control equipment to achieve precise control and adjustment of industrial equipment, improve production efficiency, and save energy and reduce emissions.

The above are just some examples. VBE110MR02 can be widely used in various power electronic equipment to provide stable and reliable power control solutions for product design.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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