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VBE1106N 产品详细

产品简介:

VBE1106N is a high-performance single N-channel MOSFET suitable for various power supply and power management applications, including power inverters, LED lighting drivers and industrial controls, etc., with a wide range of application prospects. It has low drain-source Characteristics such as extremely high on-resistance, high drain current and wide operating voltage range make it widely used in a variety of fields and modules.

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产品参数:

parameter:
- Type: Single N-channel MOSFET
- Rated voltage (VDS): 100V
- Gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 1.8V
- Drain-source on-resistance (m次) at VGS=4.5V: 57m次
- Drain-source on-resistance (m次) at VGS=10V: 55m次
- Drain current (ID): 25A
- Technology: Trench MOSFET
-Package:TO252

领域和模块应用:

Application introduction:

for example:
1. Power inverter module:
VBE1106N is suitable for power inverter modules such as solar inverters, grid inverters and UPS (uninterruptible power supply). Its high rated voltage and large drain current can adapt to power inverter systems of different sizes and ensure high performance and reliability.

2. LED lighting driver module:
In the driver module of LED lighting products, VBE1106N can be used as a power switching device to realize LED control and dimming. Its high drain current and low on-resistance can provide stable current output and ensure the brightness and stability of LED lighting products.

3. Industrial control module:
In industrial control systems, VBE1106N can be used in motor drive, power inverter and power conditioning applications. Its high performance and reliability can improve the efficiency and stability of industrial production and meet the needs of industrial production for high quality and high efficiency.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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