产品参数:
parameter:
- Type: Single N-channel field effect transistor (Single N)
- Rated drain-source voltage (VDS): 100V
- Gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 1.8V
- On-resistance (m次) when gate-source voltage is 4.5V: 34m次
- On-resistance (m次) when gate-source voltage is 10V: 32m次
- Maximum drain current (ID): 40A
- Technical features: Trench
Package: TO252
领域和模块应用:
The product is suitable for various fields and modules, as follows:
1. **Power module**:
Because VBE1104NB has high drain-source voltage and drain current, it is suitable for use as the main switch or synchronous rectifier in switching power supply modules, providing reliable power conversion and efficient energy transfer.
2. **Electric Vehicles**:
In electric vehicles, this product can be used as a power switch for motor drivers, enabling efficient energy conversion and reliable performance of electric vehicles.
3. **Industrial Automation**:
In the field of industrial automation, VBE1104NB can be used in various industrial control modules and drives, such as frequency converters, PLC systems and robot controllers, to achieve precise motion control and reliable system operation.
4. **Solar Inverter**:
Due to its high voltage and current characteristics, this product is suitable for power switches in solar inverter modules for energy conversion and output control of solar panels.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性