产品参数:
2. Detailed parameter description:
- Model: VBC8338
- Brand: VBsemi
- MOSFET type: Dual N+P
- Drain-source voltage (VDS): ㊣30V
- Gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 2V (N channel)/-2V (P channel)
- On-resistance (m次) at VGS=4.5V: 2/14 (N/P channel)
- On-resistance (m次) at VGS=10V: 2/7 (N/P channel)
- Drain current (ID): 6.2A (N channel)/5A (P channel)
- Technology: Trench
-Package: TSSOP8
领域和模块应用:
3. Examples of application areas and modules:
This product is suitable for the following areas and modules:
1. Power management: used for power switch control in power management systems such as power switches, DC-DC converters and inverters.
2. Consumer electronics: Suitable for power management and power control in consumer electronics products such as mobile devices, laptops and tablets.
3. Communication equipment: Power switch control modules used in communication equipment such as base stations, communication network equipment, and routers.
4. Automotive electronics: suitable for automotive electronic modules such as automotive electronic systems, vehicle entertainment systems and vehicle chargers.
5. Industrial control: used for power switch control in industrial control systems such as PLC, industrial robots and automated production lines.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性