产品参数：
**VBsemi VBC6P3033**
**Brand:** VBsemi
**parameter:**
- **Dual P+P:** Dual P-type field effect transistor
- **VDS(V):** Drain-source voltage: -30V
- **VGS(㊣V):** Gate-source voltage range: ㊣20V
- **Vth(V):** Threshold voltage: -1.7V
- **VGS=4.5V(m次):** On-resistance when gate-source voltage is 4.5V: 55m次
- **VGS=10V(m次):** On-resistance when gate-source voltage is 10V: 36m次
- **ID (A):** Drain current: -5.2A
- **Technology:** Technology: Trench (trench structure)
**Package:**
- **TSSOP8:** 8-pin TSSOP package
领域和模块应用：
**Application examples:**
1. **Power Management Module:** VBC6P3033 can be used in the power switching circuit and power controller in the power management module. For example, it can be used in power management modules in smartphones or tablets to implement battery charge and discharge control and power management.
2. **DC-DC converter:** Due to its small drain current and low on-resistance, VBC6P3033 is suitable for power switching circuits in DC-DC converters. For example, in portable electronics, it can be used in power switches in DC-DC converters to achieve voltage conversion and current regulation.
3. **LED drive module:** In LED lighting systems, VBC6P3033 can be used as the power switch and current control device in the LED drive module. The smaller drain current and low on-resistance ensure the stable operation and high-efficiency conversion of the LED lamp series circuit.
*请注意：以上只是示例应用场景，具体的应用取决于系统设计的要求和条件。在使用该器件时，请查阅其数据手册以获取详细的技术规格和特性
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