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VBC6N2014 产品详细

产品简介:

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产品参数:

parameter:
- Type: Common source N+N channel field effect transistor
- Nominal drain-source voltage (VDS): 20V
- Nominal gate-source voltage (VGS): ㊣12V
- Threshold voltage (Vth): 0.5~1.5V
- On-resistance RDS(on) (VGS=2.5V): 18m次
- On-resistance RDS(on) (VGS=4.5V): 14m次
- Maximum drain current (ID): 7.6A
- Technology: Trench (trench structure)
Package: TSSOP8

领域和模块应用:

Application introduction:
The VBC6N2014 is suitable for high performance power amplification and switching control applications. Due to its high drain current and low on-resistance characteristics, it can be widely used in the following fields and corresponding modules:
1. Power amplification: VBC6N2014 can be used as the output stage in a power amplifier to amplify input signals and drive loads. It is suitable for audio amplifiers, power amplifier modules, etc.
2. Motor control: In the fields of power tools, automotive electronics, etc., VBC6N2014 can be used as a switching tube in a motor controller to achieve efficient control and drive of the motor.
3. Power switch: As a switching tube in a switching power supply, VBC6N2014 can be used in switching regulators, DC-DC converters and other modules to achieve efficient power conversion and stable output.
4. Power management: Used as a power switch in the power management module, VBC6N2014 can quickly switch and adjust the power supply to ensure the stability and efficiency of the circuit.
5. LED driver: As part of the LED driver, VBC6N2014 can be used in LED lighting, display screens and other fields to achieve efficient control and regulation of LEDs.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

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