产品参数：
Detailed parameter description:
- Brand: VBsemi
- Product model: VBA5638
- Type: Dual N-type and P-type field effect transistors
- VDS (drain-source voltage): ㊣60V
- VGS (gate-source voltage): 20V
- Vth (threshold voltage): 1.8/-1.7V
- RDS(on) On-resistance at VGS=4.5V: 29/60 m次
- RDS(on) On-resistance at VGS=10V: 26/55 m次
- Maximum drain current (ID): 5.3/-4.9A
- Technology: Trench
-Package: SOP8
领域和模块应用：
Application examples:
1. Power electronics field: switches and control devices used in high-voltage direct current transmission systems.
2. Industrial power module: suitable for power management and power switching in industrial equipment.
3. Electric vehicles: Power switch modules used in electric drive systems of electric vehicles and hybrid vehicles.
4. Solar inverter: used in inverter circuits in solar photovoltaic power generation systems.
5. Communication equipment: suitable for power amplification and adjustment modules in wireless communication equipment.
*请注意：以上只是示例应用场景，具体的应用取决于系统设计的要求和条件。在使用该器件时，请查阅其数据手册以获取详细的技术规格和特性
中文
English
返回上级页面
立即下载
