产品参数:
**VBsemi VBA4317 dual P-type MOSFET**
- **Parameters:**
- Maximum drain-source voltage (VDS): -30V
- Standard gate-source voltage (VGS): ㊣12V
- Threshold voltage (Vth): -1.7V
- Drain-source resistance (m次) at VGS=4.5V: 28
- Drain-source resistance (m次) at VGS=10V: 21
- Maximum drain current (ID): -8A
- Technology: Trench
- **Package:**
-SOP8
领域和模块应用:
The VBA4317 is suitable for a variety of power supply and power control applications and has the following features:
1. **Power management field:** Due to its double P-type structure and high power characteristics, VBA4317 is very suitable for use in power management applications such as switching power supplies, DC-DC converters and inverters. For example, used as power switching modules in industrial power supplies and communication power supplies.
2. **Battery charge and discharge control:** In battery charge and discharge control applications, VBA4317 can be used as a power switch for battery management chips and charge controllers to achieve precise control and protection of the battery charge and discharge process. For example, battery management modules for electric vehicles and portable electronic devices.
3. **Motor Drive and Control:** Due to its high current handling capability and low resistance characteristics, VBA4317 can be used in motor drive and control applications such as stepper motor drivers, DC motor controllers and brushless DC motor controllers. For example, used in motor control modules in industrial automation and robotics.
4. **Automotive electronic systems:** In automotive electronic systems, VBA4317 can be used in power control modules such as engine control modules, electric vehicle battery management systems and vehicle charging piles. Its high performance and reliability make it ideal for automotive electronic systems.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性