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VBA4101M 产品详细

产品简介:

VBsemi's VBA4101M is a dual P+P channel power MOSFET with -100V drain-source voltage (VDS), 20V gate-source voltage (VGS), and -2V threshold voltage (Vth). When the gate-source voltage is 4.5V, the on-resistance when turned on is 155mΩ; when the gate-source voltage is 10V, the on-resistance when turned on is 110mΩ. This MOSFET has a maximum drain current (ID) of -4.5A and is manufactured using Trench technology.

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产品参数:

**VBA4101M**

**Brand:** VBsemi
**parameter:**
- Type: Dual P+P
- VDS(V): -100
-VGS(㊣V): 20
-Vth(V): -2
- VGS=4.5V(m次): 155
- VGS=10V(m次): 110
- ID (A): -4.5
- Technology: Trench

**Package:** SOP8

领域和模块应用:

VBA4101M is suitable for a variety of fields and modules, including but not limited to:
1. **Power Switching Module:** Due to its dual P+P channel design and high voltage tolerance, this MOSFET is suitable for power switching modules such as switching power supplies, inverters and power amplifiers. It provides efficient power switching and stable energy conversion.

2. **Automotive electronic module:** In the field of automotive electronics, VBA4101M can be used in automotive electric drive systems, including motor drivers for electric vehicles, hybrid vehicles, and electric bicycles. Its high performance and durability allow it to withstand the high temperatures and loads found in automotive environments.

3. **Industrial control system:** This MOSFET is also suitable for power switch modules in industrial control systems, such as industrial UPS, frequency converters and motor controllers. Its dual P+P channel design and high drain current ensure stable operation and efficient energy conversion of industrial equipment.

4. **Communication equipment module:** In the field of communication, VBA4101M can be used in communication equipment modules, such as base station power amplifiers, signal amplifiers and radio frequency regulators. Its high performance and reliability help improve the performance and stability of communication equipment.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

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