VBA3316SD is a half-bridge N+N MOSFET designed for high-efficiency power conversion and driving applications. Its main parameters include:
- Rated drain-to-source voltage (VDS) is 30V, suitable for medium power applications.
- Maximum gate-source voltage (VGS) is 20V, providing a wide operating range.
- Threshold voltage (Vth) is 1.7V, suitable for low voltage control circuits.
- The on-resistance at VGS=4.5V is 22mΩ, and the on-resistance at VGS=10V is 18mΩ. It has low on-resistance and is suitable for high-efficiency power conversion.
- The maximum drain current (ID) is 6.8A (switching state), 10A (conducting state), suitable for high-efficiency power conversion.
- Using Trench technology, it has excellent electrical characteristics and reliability.

VBA3316SD is suitable for high-efficiency power conversion and drive applications, including electric vehicle power modules, power conversion modules, industrial automation control modules and other fields.