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VBA3316D 产品详细

产品简介:

VBA3316D is a half-bridge N+N type field effect transistor. This product uses trench technology and is packaged in SOP8.

VBA3316D can provide stable and reliable power output, and has low on-resistance and efficient power conversion characteristics. It is suitable for use in power control and drive modules that require high performance and high reliability.

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产品参数:

parameter:
- MOSFET type: Half-Bridge N+N
- Rated drain-source voltage (VDS): 30V
- Gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 1.7V
- Static operating resistance (RDS(on)):
- When VGS=4.5V: 12m次
- When VGS=10V: 8m次
- Rated drain current (ID): 8A
- Technology: Trench
Package: SOP8

领域和模块应用:

Application introduction:
This product is suitable for half-bridge drive circuits and is commonly used in the following application scenarios:
1. Power switch module: used in power switch modules such as DC-DC converters and switching power supplies to achieve efficient energy consumption and stable power output.
2. Electric vehicle control module: used in the drive system of electric vehicles, including motor control, inverter and other modules to achieve high performance and efficiency of electric vehicles.
3. Power management module: used in various power management systems, including chargers, inverters and other modules to achieve stable power output and efficient energy conversion.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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