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VBA3222 产品详细

产品简介:

This product is a dual N-type MOSFET. Its main parameters include:
- Maximum drain-source voltage (VDS) is 20V;
- Maximum gate-source voltage (VGS) is plus or minus 12V;
- Threshold voltage (Vth) is between 0.5 and 1.5;
- When the gate-source voltage is 4.5V, the on-resistance (RDS(on)) is 26mΩ;
- When the gate-source voltage is 10V, the on-resistance is 19mΩ;
- Maximum drain current (ID) is 7.1A;
- Made using Trench technology;
- Packaged as SOP8.

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产品参数:

Product model: VBA3222
Brand: VBsemi
parameter:
- Dual N+N
- VDS(V): 20
- VGS(㊣V): 12
- Vth(V): 0.5~1.5
- RDS(on) VGS=4.5V(m次): 26
- RDS(on) VGS=10V(m次): 19
- ID (A): 7.1
- Technology: Trench
Package: SOP8

领域和模块应用:

This MOSFET is suitable for circuits and modules that require high performance switching, especially in the following areas and modules:
- Power Inverter Module: Due to its double N-type structure and high drain current capability, it is suitable for efficient energy conversion in power inverters and driving motors.
- Electric vehicle control module: can be used for key modules such as drive control, battery management and motor control in electric vehicles.
- Industrial automation module: In industrial automation systems, it can be used for switching power supply, motor control and temperature control modules.
- LED lighting module: suitable for modules such as power switches, dimmers and current regulators in LED lighting.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

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* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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