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VBA2101M 产品详细

产品简介:

VBA2101M is a VBsemi brand single-channel P-type metal oxide semiconductor field effect transistor (MOSFET). The high performance and reliability of the VBA2101M enable it to play an important role in a variety of industrial and consumer electronics applications. Adopted SOP8 package.

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产品参数:

The device is manufactured using trench technology and has the following main parameters:

- Rated drain-source voltage (VDS): -100V
- Gate-source voltage (VGS) range: ㊣20V
- Threshold voltage (Vth): -2V
- Drain-source resistance (RDS(on)) when gate-source voltage is 4.5V: 155m次
- Drain-source resistance (RDS(on)) when gate-source voltage is 10V: 110m次
- Maximum drain current (ID): -4.5A

领域和模块应用:

The application of groove technology enables excellent performance in a variety of applications.
For example, in power management modules, VBA2101M can be used in DC-DC converters, voltage regulators and other fields.
Its high rated voltage and low on-resistance make it particularly suitable for applications that need to withstand high voltage and high power, such as power amplifier modules in communication equipment, power supply modules in servers, etc.
In addition, its high threshold voltage and low static power consumption also make it ideal for portable electronic devices such as laptops, tablets, etc.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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