产品简介:
VBA1606 is a high-performance N-channel field effect transistor with low on-resistance and high drain current carrying capacity, suitable for various power management and power amplification applications.
**Detailed parameter description:**
1. **Single N**: Indicates that this is an N-channel field effect transistor (FET).
2. **VDS(V)**: drain-source voltage, the maximum withstand voltage is 60V.
3. **VGS(±V)**: Gate-source voltage, which can withstand up to plus or minus 20V.
4. **Vth(V)**: Threshold voltage, that is, when the gate voltage reaches 3V, the transistor starts to conduct.
5. **On-resistance (mΩ) when VGS=4.5V**: The on-resistance when the gate-source voltage is 4.5V is 6mΩ.
6. **On-resistance (mΩ) when VGS=10V**: The on-resistance when the gate-source voltage is 10V is 5mΩ.
7. **ID (A)**: The maximum drain current is 16A.
8. **Technology**: Made using Trench technology.
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