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VBA1206 产品详细

产品简介:

This product is a single N-channel MOSFET suitable for a maximum drain-source voltage of 20V and a maximum gate-source voltage of ±12V. It is especially suitable for applications requiring high efficiency and high performance. The threshold voltage is 0.5~1.5V, the drain current can reach 15A, and it is manufactured using Trench technology. The package is SOP8.

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产品参数:

Product model: VBA1206
Brand: VBsemi
parameter:
- Single N-channel MOSFET
- Maximum drain-source voltage (VDS): 20V
- Maximum gate-source voltage (VGS): ㊣12V
- Threshold voltage (Vth): 0.5~1.5V
- On-resistance (RDS(on)) at VGS=2.5V: 8 m次
- On-resistance (RDS(on)) at VGS=4.5V: 6 m次
- Maximum drain current (ID): 15A
- Technology: Trench
Package: SOP8

领域和模块应用:

This MOSFET is suitable for many fields and modules, here are some examples:

1. Power management module: Due to its low on-resistance and moderate drain current, it can be used in switching power supplies and DC-DC converters to improve efficiency and reduce power consumption.

2. Motor drive module: Suitable for motor control modules, such as motor drivers and stepper motor controllers, to achieve efficient motor drive and precise control.

3. LED driver module: Can be used in LED lighting drivers to achieve stable current output and dimming functions while providing high efficiency and reliability.

4. Battery management module: In the charging and discharging control circuit, the MOSFET can be used in battery protection and battery management systems to ensure safe charging and discharging of the battery and extend battery life.

5. Automotive electronic modules: Suitable for various applications in automotive electronic systems, such as engine control units (ECUs), braking systems, lighting systems and entertainment systems, to improve system performance and reliability.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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