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VBA1154N 产品详细

产品简介:

VBA1154N is a high-performance single N-channel field effect transistor suitable for low-power electronic equipment, smart home modules and industrial sensor modules. It can provide stable and efficient power management and signal amplification solutions for these fields.

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产品参数:

Detailed parameter description:
- Product type: Single N-channel field effect transistor (Single N-MOSFET)
- Maximum drain-source voltage (VDS): 150V
- Maximum gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 3V
- Drain-source resistance (m次) at VGS=10V: 40
- Maximum drain current (ID): 7.7A
- Technology: Trench
-Package: SOP8

领域和模块应用:


Its characteristics include high drain-source voltage and moderate drain current, as well as high drain-source resistance, making it widely used in the following fields and modules:

1. Low-power electronic equipment: VBA1154N is suitable for power management, signal amplification and switch control in low-power electronic equipment. Its low drain current and moderate current capacity can meet the needs of low-power devices for efficient energy consumption, while the SOP8 package can provide compact size and convenient installation.

2. Smart home module: In the field of smart home, VBA1154N can be used for smart switches, lighting control and power management modules. Its stable performance and moderate current capacity can meet the reliability and safety requirements of smart home devices, while the SOP8 package can meet the module's requirements for miniaturization and integration.

3. Industrial sensor module: In the field of industrial sensors, VBA1154N can be used for sensor signal amplification, data acquisition and power management modules. Its high threshold voltage and moderate drain current capability can meet the needs of industrial sensors for high accuracy and stability, while the SOP8 package can provide good heat dissipation performance and durability.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

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