产品简介:
The VBA1102M is a single N-channel MOSFET with low power consumption and high performance, suitable for a variety of low-power power supply and signal processing applications. Its features include low drain-source on-resistance, high threshold voltage and stable performance, making it widely used in a variety of fields and modules.
VBA1102M is suitable for low-power power supply and signal processing fields, including small power management, low-power signal processing and portable electronic equipment, etc., and has a wide range of application prospects.
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产品参数:
parameter:
- Type: Single N-channel MOSFET
- Rated voltage (VDS): 100V
- Gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 1.5V
- Drain-source on-resistance (m次) at VGS=4.5V: 240m次
- Drain-source on-resistance (m次) at VGS=10V: 200m次
- Drain current (ID): 2.5A
- Technology: Trench MOSFET
-Package: SOP8
领域和模块应用:
for example:
1. Small power management module:
VBA1102M is suitable for various small power management modules, such as USB chargers, battery charging management, mobile phone charging modules, etc. Its small package and low power consumption enable efficient control of power transfer and current flow in small devices.
2. Low power signal processing module:
In low-power signal processing systems, VBA1102M can be used in modules such as amplifiers, filters, and signal conditioning. Its stable performance and low power consumption can improve the performance and efficiency of signal processing systems and meet the demand for high-quality signal processing.
3. Portable electronic device module:
In portable electronic devices, VBA1102M can be used in battery management, signal amplification and power conditioning modules. Its small package and low power consumption make it ideal for portable devices such as mobile phones, tablets and smart watches.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性