产品参数:
**Detailed parameter description:**
- Brand: VBsemi
- Product model: VB562K
- MOSFET type: dual N-channel and P-channel
- Rated voltage (VDS): ㊣60V
- Maximum gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 1.8V (N-channel), -1.7V (P-channel)
- Typical static drain resistance (VGS=4.5V): 850m次 (N-channel), 2410m次 (P-channel)
- Typical static drain resistance (VGS=10V): 700m次 (N-channel), 2060m次 (P-channel)
- Maximum drain current (ID): 0.8A (N-channel), -0.55A (P-channel)
- Technology: Trench
-Package: SOT23-6
领域和模块应用:
**Examples of applicable fields and modules:**
1. **Low-power power module:** VB562K's low static drain resistance and small package size make it suitable for low-power power modules, such as portable electronic products, smart home devices, etc.
2. **Battery protection system:** Due to its dual N-channel and P-channel structure, VB562K can be used as a power control module in the battery protection system to achieve precise control of the battery charge and discharge process.
3. **Electric toys:** In electric toys, VB562K can be used in power control modules, such as electric cars, remote control aircraft, etc., to provide stable and reliable power output.
4. **Mobile device charger:** Due to its small package size and low power consumption, VB562K can be used as a power switch module in mobile device chargers to achieve a high-efficiency charging process.
5. **LED driver:** In LED lighting systems, VB562K can be used in power control modules, such as LED drivers, to provide stable and reliable power output and achieve efficient brightness adjustment of LED lamps.
The above are some examples of fields and modules suitable for VB562K products. Its high performance and reliability make it an ideal choice for various power control applications.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性