产品参数：
Detailed parameter description:
- Brand: VBsemi
- Model: VB5460
- Type: Dual N+P type power MOSFET
- Rated voltage (VDS): ㊣40V
- Gate-source voltage range (VGS): ㊣20V
- Threshold voltage (Vth): 1.8V (N type), -1.7V (P type)
- On-resistance (RDS(on)) when gate-source voltage is 4.5V: 35 m次 (N type), 80 m次 (P type)
- On-resistance (RDS(on)) when gate-source voltage is 10V: 30 m次 (N type), 70 m次 (P type)
- Rated current (ID): 8A (N type), -4A (P type)
- Technology: Trench
-Package: SOT23-6
领域和模块应用：
Examples of applicable fields and modules:
1. Power management module: The low-power characteristics of VB5460 make it suitable for some low-power power management modules, such as small voltage regulators, switching power supplies, etc.
2. Handheld devices: This device has a compact package and is suitable for power switch modules in handheld devices, such as power management in smartphones, tablets, etc.
3. LED light driver: In the field of LED lighting, VB5460 can be used as a power switching device in the LED light driver for dimming and driving LED lights.
*请注意：以上只是示例应用场景，具体的应用取决于系统设计的要求和条件。在使用该器件时，请查阅其数据手册以获取详细的技术规格和特性
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