Product introduction:
VB5222 is a Dual N+P type field effect transistor produced by VBsemi and is suitable for various electronic applications. Features a dual-channel design that provides flexible functionality in a variety of circuits.

Detailed parameter description:
- VDS(V): Maximum drain-source voltage is ±20V.
- VGS(±V): Gate-source voltage range is ±20V.
- Vth(V): The turn-on voltage is 1.0V (N channel) and -1.2V (P channel).
- VGS=4.5V(mΩ): When the gate-source voltage is 4.5V, the drain-source resistance is 30 mΩ (N channel) and 79 mΩ (P channel) respectively.
- VGS=10V(mΩ): When the gate-source voltage is 10V, the drain-source resistance is 22 mΩ (N channel) and 55 mΩ (P channel) respectively.
- ID (A): Maximum drain current is 5.5A (N channel) and 3.4A (P channel) respectively.
- Technology: Using Trench technology.