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VB4290A 产品详细

产品简介:

This product is a dual-channel P-type MOSFET with the following characteristics:
- Withstand voltage: VDS can reach a maximum of -20V, VGS can reach a maximum of ±20V, suitable for a variety of application scenarios.
- Threshold voltage: Vth is -0.6V, allowing the MOSFET to operate normally under a certain voltage.
- On-resistance: When VGS is 2.5V, the on-resistance is 90mΩ; when VGS is 4.5V, the on-resistance is 65mΩ, which has low on-resistance characteristics.
- Maximum current: ID can reach up to -4A, suitable for small and medium power circuits.
- Technology: Manufactured using Trench technology for high performance and reliability.
-Package: SOT23-6, suitable for layout design in limited space.

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产品参数:

Product model: VB4290A
Brand: VBsemi
parameter:
- Dual P+P
- VDS(V): -20
-VGS(㊣V): 20
- Vth(V): -0.6
- RDS(on) VGS=2.5V(m次): 90
- RDS(on) VGS=4.5V(m次): 65
- ID (A): -4
- Technology: Trench
Package: SOT23-6

领域和模块应用:

Application introduction:
This product is suitable for the following areas and modules:
1. Power management module: Due to its dual-channel design and low on-resistance, it can be used in power switches and power regulators to provide stable power output.
2. Battery protection module: It can be used in the lithium battery protection circuit to protect the battery from over-discharge and over-charge, thereby improving the safety and service life of the battery.
3. Low-power application module: Due to low static power consumption and low on-resistance, it is suitable for low-power application scenarios such as portable devices and wireless sensor networks, extending the battery life of the device.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

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