产品简介:
This product is a dual-channel P-type MOSFET with the following characteristics:
- Withstand voltage: VDS can reach a maximum of -20V, VGS can reach a maximum of ±20V, suitable for a variety of application scenarios.
- Threshold voltage: Vth is -0.6V, allowing the MOSFET to operate normally under a certain voltage.
- On-resistance: When VGS is 2.5V, the on-resistance is 90mΩ; when VGS is 4.5V, the on-resistance is 65mΩ, which has low on-resistance characteristics.
- Maximum current: ID can reach up to -4A, suitable for small and medium power circuits.
- Technology: Manufactured using Trench technology for high performance and reliability.
-Package: SOT23-6, suitable for layout design in limited space.
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