产品参数:
parameter:
- Type: Dual N+N
- Core voltage (VDS): 60V
- Gate-source voltage range (VGS): ㊣20V
- Threshold voltage (Vth): 1.7V
- Drain-source resistance (m次) at 4.5V gate-source voltage: 60
- Drain-source resistance (m次) at 10V gate-source voltage: 48
- Maximum drain current (ID): 4.2A
- Technology: Trench
Package: SOT23-6
领域和模块应用:
Application introduction:
1. Power management module: VB3658 has the characteristics of dual N-type MOSFETs and is suitable for battery protection and charge and discharge control in the power management module. Its high voltage and moderate current characteristics make it an ideal choice for power management modules, providing stable and reliable battery management and charge and discharge control functions.
2. DC-DC converter: In the DC-DC converter, power switching devices are required to achieve voltage up and down conversion. The dual N-type MOSFET structure of VB3658 makes it suitable for voltage conversion modules in DC-DC converters, and can provide stable and reliable voltage conversion functions, such as laptop power converters, mobile phone chargers, etc.
3. Motor drive module: In the motor drive module, power switching devices are required to control the switching and regulation of the motor. The high voltage and moderate current characteristics of VB3658 make it an ideal choice for motor drive modules, capable of providing stable and reliable motor control functions, such as household appliance motor control, industrial machinery motor control, etc.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性