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VB3222A 产品详细

产品简介:

VB3222A is a dual N+N channel field effect transistor with a drain-source voltage (VDS) of 20V, a gate-source voltage (VGS) of ±20V, a threshold voltage (Vth) of 0.5~1.5V, and a Drain-source resistance (RDS(on)) at different gate-source voltages. In addition, it has a drain current (ID) capacity of 6A, is manufactured using trench technology, and is packaged in SOT23-6.

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产品参数:

**parameter:**
- Dual N+N channel field effect transistor
- VDS(V): 20
-VGS(㊣V): 20
-Vth(V): 0.5~1.5
- Drain-source resistance (m次) at VGS=4.5V: 26
- Drain-source resistance (m次) at VGS=10V: 22
-ID(A): 6
- Technology: Groove
**Package:** SOT23-6

领域和模块应用:

**Application examples:**
1. **Power management module:** The dual N+N structure and moderate drain current capacity of VB3222A make it very suitable for use in power management modules. For example, it can be used in applications such as low-power switching power supplies and battery charge and discharge management systems to achieve efficient energy conversion and stable power output.

2. **LED lighting controller:** Since VB3222A has low drain-source resistance and dual N+N structure, it can also be used as a power switching device in LED lighting controllers. For example, it can be used in LED driving circuits to achieve efficient LED lighting control and dimming functions.

3. **Mobile Device Charging Management:** The device's small package and moderate drain current capacity make it ideal for use in mobile device charging management modules. For example, it can be used in the charging management circuit of mobile devices such as smartphones and tablets to ensure a safe and efficient charging process.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

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