产品参数:
parameter:
- Type: Dual N-channel field effect transistor (Dual N+N)
- Rated drain-source voltage (VDS): 100V
- Gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 1.5V
- On-resistance (m次) when gate-source voltage is 4.5V: 180m次
- On-resistance (m次) when gate-source voltage is 10V: 140m次
- Maximum drain current (ID): 2A
- Technical features: Trench
Package: SOT23-6
领域和模块应用:
The product is suitable for various fields and modules, as follows:
1. **Power Management**:
As a dual N-channel field effect transistor, VB3102M can be used for power switches and power protection in power management modules to provide stable power output and circuit protection functions.
2. **Electric Vehicles**:
In electric vehicles, this product can be used as a power switch for motor driver modules to control the power transmission and battery management of electric vehicles, improving the performance and efficiency of electric vehicles.
3. **Industrial Automation**:
Due to its high voltage and current characteristics, VB3102M is suitable for power switches and driver modules in industrial control systems, such as frequency converters, PLC systems and industrial robot controllers, to achieve precise motion control and efficient energy conversion.
4. **LED driver**:
In LED lighting applications, this product can be used as a power switch for LED driver modules to control the brightness and color temperature of LED lights to provide efficient lighting solutions.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性