产品参数：
**VB2212N**
**Brand:** VBsemi
**parameter:**
- **Single P:** Single P-type field effect transistor
- **VDS(V):** Collector-source voltage: -20V
- **VGS(㊣V):** Gate-source voltage range: ㊣12V
- **Vth(V):** Threshold voltage: -0.8V
- **VGS=4.5V(m次):** Drain-source resistance when gate-source voltage is 4.5V: 90m次
- **VGS=10V(m次):** Drain-source resistance when gate-source voltage is 10V: 71m次
- **ID (A):** Drain current: -3.5A
- **Technology:** Channel process
- **Package:** SOT23-3
领域和模块应用：
**Applicable areas and module examples:**
1. **Mobile device module:** VB2212N can be used for power management and charge and discharge protection circuits in mobile device modules. Its small size and high performance make it suitable for mobile phones, tablets and other mobile devices, providing stable power output and battery protection functions.
2. **LED lighting driver module:** In the LED lighting driver module, VB2212N can be used for the power control circuit of LED light strips and bulbs. Its low drain-source resistance and moderate drain current enable efficient LED driving, improving the brightness and stability of LED lighting systems.
3. **Power management module:** In the power management module, VB2212N can be used for power switching and regulating circuits in low-power electronic equipment and embedded systems. Its high threshold voltage and small package form enable compact power management designs, improving device energy efficiency and reliability.
*请注意：以上只是示例应用场景，具体的应用取决于系统设计的要求和条件。在使用该器件时，请查阅其数据手册以获取详细的技术规格和特性
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