产品参数：
VB2201K is a single P-channel field effect transistor (MOSFET) launched by the VBsemi brand. It has the following parameters and characteristics:
- **VDS(V):** The maximum drain-source voltage is -200V, which is suitable for higher voltage application scenarios.
- **VGS(㊣V):** The gate-source voltage range is ㊣20V, which can provide a larger control range.
- **Vth(V):** The threshold voltage is -3V, which means conduction starts at this voltage.
- **VGS=4.5V(m次):** The drain-source resistance is 1100m次 when the gate-source voltage is 4.5V.
- **VGS=10V(m次):** The drain-source resistance is 800m次 when the gate-source voltage is 10V.
- **ID (A):** Maximum drain current is -0.8A, suitable for low to medium current applications.
- **Technology:** Manufactured using Trench technology, with good performance and stability.
- **Package:** Using SOT23-3 package, small size, suitable for compact space applications.
领域和模块应用：
This product is suitable for a variety of fields and modules, examples are as follows:
In the power management module, VB2201K can be used as a switching tube for power switch control and power management, such as in power inverters, DC-DC converters and LED drivers.
In automotive electronic modules, VB2201K can be used in motor drivers and controllers of electric vehicles, for battery management systems and power switch control of on-board electronic equipment.
In the field of industrial automation, VB2201K can be used for power switch control in equipment such as industrial robots, PLC controllers and frequency converters to achieve precise motion control and energy consumption management.
In the communication equipment module, VB2201K can be used in the power amplifier and power management unit of the communication base station to achieve signal amplification and stable power supply.
*请注意：以上只是示例应用场景，具体的应用取决于系统设计的要求和条件。在使用该器件时，请查阅其数据手册以获取详细的技术规格和特性
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