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VB2101K 产品详细

产品简介:

VBsemi's VB2101K is a Single P-type MOSFET with excellent performance and stability. Its VDS can reach -100V, VGS operating range is ±20V, and the threshold voltage is -2V. Using Trench technology, it has lower turn-on resistance and high switching speed, suitable for a variety of power control and switching applications.

The on-resistance of VB2101K is 560mΩ when VGS=4.5V and 500mΩ when VGS=10V, providing low on-state voltage drop and high performance. Its maximum leakage current ID is -1.5A and can withstand a certain current load.
VB2101K is a small, low-power Single P-type MOSFET, suitable for many fields and modules such as mobile devices, sensor interfaces and medical electronics, providing stable and reliable power and control solutions for various applications.

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产品参数:

**VB2101K**

**Brand: VBsemi**

**parameter:**
- **Single P**
- **VDS(V):** -100
- **VGS(㊣V):** 20
- **Vth(V):** -2
- **VGS=4.5V(m次):** 560
- **VGS=10V(m次):** 500
- **ID (A):** -1.5
- **Technology:** Trench

**Package:**
- **SOT23-3**

领域和模块应用:

VB2101K is suitable for multiple fields and modules, such as:
- **Mobile Device Module:** Due to its small package and low power consumption, VB2101K can be used for power management and signal switching in mobile devices, improving the efficiency and battery life of the device.
- **Sensor interface module:** In the sensor interface circuit, VB2101K can be used as a signal conditioning device to achieve stable collection and processing of sensor signals.
- **Medical Electronic Module:** Due to its stability and low power consumption characteristics, VB2101K is suitable for power management and control in medical electronic equipment to ensure the safety and reliability of the equipment.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

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* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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