Product introduction:
VBsemi VBJ17R04SE is a single N-channel field effect transistor with up to 700V drain-source voltage (VDS) and 4A drain current (ID). Manufactured with SJ_Deep-Trench technology for reliable performance and stability. The package is SOT223, suitable for a variety of applications.
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Detailed parameter description:
- Model: VBJ17R04SE
- Brand: VBsemi
- Type: Single N-channel field effect transistor
- Drain-source voltage (VDS): 700V
- Gate-source voltage (VGS): ㊣30V
- Threshold voltage (Vth): 3.5V
- On-resistance (m次) at VGS=10V: 1100
- Drain current (ID): 4A
- Process technology: SJ_Deep-Trench
-Package: SOT223
Examples of applicable fields and modules:
1. Small power module: Due to its compact package, it is suitable for small power modules, such as mobile phone chargers, small power tools, etc.
2. Consumer electronics: It can be used in power switch modules in consumer electronics, such as TVs, speakers, etc.
3. Electric toys: Suitable for motor drive modules in electric toys to provide driving force and control.
4. Smart home equipment: used in power switch modules in smart home equipment to realize intelligent control and management of equipment.
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