产品简介：
Product introduction:
VBsemi's VB165R01 is a Single N field effect transistor manufactured using Plannar technology. It features a drain-source voltage (VDS) of up to 650V, a gate-source voltage (VGS) of 30V, and a threshold voltage (Vth) of 3.5V. The device has a maximum drain-to-source resistance (RDS(on)) of 8400mΩ and a maximum drain current (ID) of 1A. It is packaged in SOT23-3 package.
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产品参数：
Detailed parameter description:
- Voltage parameters: VDS (drain-source voltage) is 650V, VGS (gate-source voltage) is ㊣30V, Vth (threshold voltage) is 3.5V.
- Current parameters: When VGS=10V, the drain-source resistance (RDS(on)) is 8400m次, and the maximum drain current (ID) is 1A.
- Technology: Made with Plannar technology.
领域和模块应用：
Examples of applicable fields and modules:
1. Industrial power module: Since VB165R01 has a high drain-source voltage and moderate drain current, it can be used in industrial power modules such as DC-DC converters or inverters.
2. LED lighting control: Its low threshold voltage and high drain-source voltage make it suitable for power switches in LED lighting control modules.
3. Automotive electronic systems: In automotive electronic systems, VB165R01 can be used as a power switch module in the battery management system or the electric drive system of electric vehicles.
*请注意：以上只是示例应用场景，具体的应用取决于系统设计的要求和条件。在使用该器件时，请查阅其数据手册以获取详细的技术规格和特性
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