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VB162K 产品详细

产品简介:

The VB162K is a single N-channel MOSFET suitable for low power circuit applications. It is characterized by low drain current and low power consumption, making it suitable for applications requiring circuits with low power consumption and high stability. Using Trench technology, it has high gate-source resistance and is suitable for low-power applications.

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产品参数:

parameter:
- Structure: Single N
- Rated drain-source voltage (VDS): 60V
- Rated gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 1.7V
- Gate-source resistance (VGS=4.5V): 3100 m次
- Gate-source resistance (VGS=10V): 2800 m次
- Rated drain current (ID): 0.3A
- Technology: Trench
-Package: SOT23-3

领域和模块应用:


for example:
1. Signal switch module: Since VB162K has low drain current and power consumption, it is suitable for use as a signal switch tube, such as power switch, circuit control, etc. in the circuit.
2. Battery management module: In circuits that require battery charge and discharge management, VB162K can be used as a charge and discharge tube to control the battery charge and discharge process to ensure the safety and stability of the battery.
3. Sensor interface module: In the sensor interface circuit, VB162K can be used as a switching element of the circuit to control the working status of the sensor, such as turning on or off the sensor to collect data.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

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* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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