产品参数:
Product model: VB1307N
Brand: VBsemi
parameter:
- MOSFET type: single N-channel
- Maximum drain-source voltage (VDS): 30V
- Maximum gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 1.7V
- Drain-source resistance (RDS(on)) at VGS=4.5V: 62m次
- Drain-source resistance (RDS(on)) at VGS=10V: 47m次
- Maximum drain current (ID): 5A
- Technology: Trench technology
- Package: SOT23-3
领域和模块应用:
for example:
1. **Mobile device module**: VB1307N can be used to design low-power mobile device modules, such as smartphones, tablets, and portable audio devices. Its small package and low power characteristics make it an ideal power switch in mobile devices to achieve efficient energy management of the device.
2. **Power Management Module**: In low-power power management systems, VB1307N can be used as a key component of power switches and voltage regulator modules to achieve efficient control and regulation of power supply. Its high drain-source resistance and stable characteristics provide reliable power output to meet the power needs of various electronic devices.
3. **Sensor interface module**: In the sensor interface circuit, VB1307N can be used to design low-power signal conditioning and amplification modules to achieve accurate collection and processing of sensor signals. Its low power characteristics and stable characteristics improve the performance and reliability of sensor systems.
4. **LED driver module**: In low-power LED lighting systems, VB1307N can be used to design LED driver modules to achieve brightness adjustment and color control of LED lamps. Its low power characteristics and small package make it an ideal choice in LED lighting systems, improving the performance and life of LED lamps.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性