产品参数:
**Parameter Description:**
- Product model: VB125N5K
- Brand: VBsemi
- Type: Single N-channel field effect transistor (Single N)
- Rated drain-source voltage (VDS): 250V
- Gate-source voltage (VGS): ㊣20V
- Threshold voltage (Vth): 3V
- Drain-source resistance at gate-source voltage 10V: 1500m次
- Drain current (ID): 0.3A
- Technology: Trench
-Package: SOT23-3
领域和模块应用:
**Example application scenarios and modules:**
1. **Power management module:**
In the power management module, VB125N5K can be used as a switching device in a low-power switching circuit to control the output and current regulation of the power supply. For example, in a mobile device charger, it can control the charger's output voltage and current.
2. **Sensor module:**
In the sensor module, VB125N5K can be used as a switching device in the sensor circuit to control the start and stop of the sensor and signal processing. For example, in a smart home system, it can control the working status of various environmental sensors.
3. **LED driver module:**
In the LED driver module, VB125N5K can be used as a driver for low-power LED lamps. It can control the brightness and switching status of LEDs and is used for low-power LED lights in various lighting applications.
4. **Medical Equipment Module:**
In the medical equipment module, VB125N5K can be used to control and drive low-power medical equipment. For example, in portable medical instruments, it can be used to control the device's switching and power management.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性