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VB1240B 产品详细

产品简介:

VB1240B is a single N-type MOSFET. Its main features include 20V drain-source voltage (VDS), 20V gate-source voltage (VGS), 0.5~1.5V threshold voltage (Vth), 25mΩ (VGS =2.5V) and on-resistance (RDS(on)) of 20mΩ (VGS=4.5V), and a drain current (ID) of 6A. It is manufactured using Trench process and packaged as SOT23-3.

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产品参数:

Product model: VB1240B
Brand: VBsemi
parameter:
- Single N type
- VDS(V): 20
- VGS(㊣V): 20
- Vth(V): 0.5~1.5
- RDS(on) VGS=2.5V(m次): 25
- RDS(on) VGS=4.5V(m次): 20
- ID (A): 6
- Technology: Trench
Package: SOT23-3

领域和模块应用:

Due to its low threshold voltage, low on-resistance and high drain current, VB1240B is suitable for circuit design and module applications in a variety of fields. For example,
In low-power electronic equipment, it can be used as a power switch in a power management module; in an LED lighting driver, it can be used as a switching tube in an LED drive circuit; in an electric vehicle circuit, it can be used for charge and discharge control in a battery management system. Module; in industrial automation, it can be used in fields such as motor control and power switch modules.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

技术支持:

* 如果您对产品有任何问题,请填写表格提交,我们会24小时内回复您

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