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VB1210 产品详细

产品简介:

VB1210 is a single N-channel field effect transistor. Its main characteristics include a drain-source voltage (VDS) of 20V, a gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) of 0.5~1.5V. and drain-source resistance (RDS(on)) at different gate-source voltages. Furthermore, it has a drain current (ID) capacity of 9A, is manufactured using trench technology, and is packaged in SOT23-3.

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产品参数:

**Product model:** VB1210
**Brand:** VBsemi
**parameter:**
- Single N-channel field effect transistor
- VDS(V): 20
-VGS(㊣V): 20
-Vth(V): 0.5~1.5
- Drain-source resistance (m次) at VGS=4.5V: 12
- Drain-source resistance (m次) at VGS=10V: 11
-ID(A): 9
- Technology: Groove
**Package:** SOT23-3

领域和模块应用:

**Application examples:**
1. **Power Management Module:** VB1210's low drain-source resistance and moderate drain current make it ideal for use in switching power supply designs in power management modules. It can be used in applications such as DC-DC converters and voltage regulators to ensure efficient energy conversion and stable power output.

2. **Power Tools:** Since VB1210 has high drain current capacity and low on-resistance, it can also be used as a motor driver in power tools. For example, it can be used in electric drills, electric lawn mowers, and other equipment to provide reliable motor control and efficient power transfer.

3. **Automatic control system:** This device has low switching loss and fast switching speed with the support of trench technology, and is suitable for automatic control systems that require high-speed switching. Therefore, it can be used in power switches and drive circuits in industrial automation, robot control, and electric vehicles.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性

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