产品参数:
**parameter:**
- **Configuration:** Single N type
- **Drain-Source Voltage (VDS):** 100V
- **Gate-source voltage (VGS) (㊣V):** 20V
- **Gate slot voltage (Vth):** 1.5V
- **Drain-source resistance (m次) at VGS=4.5V:** 260m次
- **Drain-source resistance (m次) at VGS=10V:** 240m次
- **Drain current (ID):** 2A
- **Technology:** Trench (groove type)
- **Package:** SOT23-3
领域和模块应用:
**Applicable areas and module examples:**
1. **Mobile device charging protection:** Since VB1102M has low drain current and high drain-source voltage characteristics, it can be used as a power switching device in mobile device charging protection circuits. Its low resistance characteristics help reduce energy loss and protect mobile devices from overcurrent and overvoltage damage.
2. **Power Management Module:** In the power management module, low-power and high-reliability power switching devices need to be used. The VB1102M's low drain current and high drain-source voltage characteristics, as well as the advantages of Trench technology, make it an ideal choice in power management modules. It can provide stable power output and ensure the efficiency and reliability of the power management module.
3. **Sensor interface circuit:** In the sensor interface circuit, low-power and reliable switching devices are required. The low drain current and small package size of the VB1102M make it suitable for power switching in sensor interface circuits. It helps achieve efficient communication between sensors and microcontrollers and provides power protection features.
*请注意:以上只是示例应用场景,具体的应用取决于系统设计的要求和条件。在使用该器件时,请查阅其数据手册以获取详细的技术规格和特性