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BSR202N-VB is a SOT23-3 packaged N-MOS tube Datasheet parameter video explanatio
**VB1240 (BSR202N-VB) N-channel field effect transistor**

- **Voltage:** 20V
- **Current:** 6A
- **On-resistance (RDS(ON)):** 24mΩ @ VGS=4.5V, VGS=8V
- **Threshold voltage (Vth):** 0.45~1V

**Package:** SOT23-3

**Application introduction:**
VB1240 is a VBsemi brand N-channel field effect transistor with high performance characteristics, suitable for various circuit designs.

**Fields and module applications:**

1. **Power management module:** Used in power switching and regulation circuits, can improve power efficiency, suitable for various power management applications.

2. **Drive circuit:** Provides reliable performance in scenarios requiring high-performance drive, such as motor drive, LED drive, etc.

3. **Battery protection:** Suitable for portable devices and battery-powered systems to protect batteries from over-current and over-voltage damage.

4. **Power switch module:** Plays a role in power switching applications such as switching power supplies and DC-DC converters.

Please note that the specific application depends on the circuit design and system requirements. When integrating VB1240, please refer to the product manual and data sheet for detailed circuit design and parameter adjustment.

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