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SSM3K309T-VB is a SOT23-3 packaged N-MOS tube Datasheet parameter video explanat
**SSM3K309T-VB Detailed parameter description and application introduction:**

- **Brand:** VBsemi
- **Model:** SSM3K309T-VB
- **Package:** SOT23-3
- **Silkscreen:** VB1240

**Parameters:**
- **Type:** N—Channel
- **Operating voltage:** 20V
- **Maximum continuous drain current:** 6A
- **On-resistance (RDS(ON)):** 24mΩ @ VGS=4.5V, VGS=8V
- **Threshold voltage (Vth):** 0.45~1V

**Application introduction:**
SSM3K309T-VB is an N-channel field effect transistor designed for low voltage, high current applications. Its low on-resistance and wide operating voltage range make it widely used in various power supply and switching applications.

**Application areas:**
1. **Power module:** Suitable for low voltage regulation and switching power supply design, providing efficient power management.
2. **Drive module:** As part of the drive circuit, it is used to control the on and off state of other electronic components.
3. **Current control module:** Used in circuits that require current control, such as motor drive and LED control.

**Precautions for use:**
1. **Voltage limitation:** Do not exceed the specified maximum operating voltage (20V).
2. **Current limitation:** Avoid exceeding the maximum continuous drain current (6A).
3. **Temperature control:** Pay attention to heat dissipation and ensure that the chip is within a safe operating temperature range.
4. **Pin connection:** Make sure to connect to the circuit correctly to avoid pin short circuit or connection error.

The above information is for reference only. Please consult the product manual for detailed specifications and usage guidelines before use.

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