TN0201T-T1-E3-VB is an N-Channel field effect transistor in SOT23-3 package produced by VBsemi. The following are detailed parameters and application introduction:

**Detailed parameters:**
- Package type: SOT23-3
- Polarity: N-Channel
- Rated voltage: 20V
- Rated current: 6A
- Static drain-source resistance (RDS(ON)):
- 24mΩ @ VGS=4.5V
- 24mΩ @ VGS=8V
- Threshold voltage (Vth): 0.45~1V

**Application introduction:**
This device is suitable for various power management and switching circuits. The main features include low drain-source resistance, low threshold voltage and high withstand voltage capability, making it excellent in many applications.

**Applicable fields and modules:**
1. **Power management module:** Due to its low drain-source resistance and high current capability, it can be used in power switching and regulation circuits.
2. **Switching power supply module:** Applicable to the power switching part of the switching power supply to improve efficiency and performance.
3. **Drive module:** Can be used as a power switching element in various drive circuits to ensure high efficiency and reliability.
4. **Power tools and electric vehicles:** In these applications, it can be used for battery management and motor control.

Overall, TN0201T-T1-E3-VB plays a role in high-performance circuits that require N-Channel trench MOSFETs, providing reliable power switching and regulation functions.