**2314N-VB Detailed parameter description:**
- **Silk screen:** VB1240
- **Brand:** VBsemi
- **Parameters:**
- Type: N—Channel
- Rated voltage : 20V
- Rated current: 6A
- Turn-on resistance (RDS(ON)): 24mΩ @ VGS=4.5V, VGS=8V
- Gate threshold voltage (Vth): 0.45~1V

- **Package:* * SOT23-3

**Application Introduction:**
2314N-VB is an N-Channel power field effect transistor (FET) suitable for a variety of power supply and switching applications.

**Application fields:**
1. **Power module:** 2314N-VB can be used for power switches in power modules to provide efficient power switch control.
2. **Current Control Module:** Due to its low turn-on resistance, it is suitable for modules requiring high current control.
3. **Drive module:** It can be used as a switching element in the circuit drive module to achieve fast switching operations.

**Features and Benefits:**
- Low turn-on resistance, providing high-efficiency power control.
- Wide range of operating voltage and current, suitable for various application scenarios.
- Small SOT23-3 package, suitable for integration in limited space.

Please be sure to refer to the manufacturer's data sheet for detailed electrical characteristics and application recommendations when using this device.